MOCVD Deposition of Group V Doped CdTe in Sublimated CdTe and CdSeTe Devices

被引：0

作者：

Danielson, Adam ^{[1
]}

Munshi, Amit ^{[1
]}

Swanson, Drew ^{[1
]}

Drayton, Jennifer ^{[2
]}

Kartopu, Giray ^{[3
]}

Barth, Kurt ^{[1
]}

Irvine, Stuart ^{[3
]}

Sampath, Walajabad ^{[1
]}

机构：

[1] Colorado State Univ, Dept Mech Engn, NGPV Next Generat PV Ctr, Ft Collins, CO 80523 USA

[2] Colorado State Univ, Dept Phys, NGPV Next Generat PV Ctr, Ft Collins, CO 80523 USA

[3] Swansea Univ, Ctr Solar Energy Res, St Asaph LL17 0JD, Wales

来源：

2018 IEEE 7TH WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION (WCPEC) (A JOINT CONFERENCE OF 45TH IEEE PVSC, 28TH PVSEC & 34TH EU PVSEC) | 2018年

关键词：

Cadmium compounds; photovoltaic cells; nitrogen; II-VI semiconductors materials; solar energy; CELLS;

D O I：

暂无

中图分类号：

X [环境科学、安全科学];

学科分类号：

08 ; 0830 ;

摘要：

Increasing doping density in CdTe absorbers remains one of the most promising avenues for increasing the open-circuit voltage (V-OC) of photovoltaic devices. This work aimed to develop methods for quickly incorporating group V as a p-type dopant using Metal-Organic Chemical Vapor Deposition (MOCVD) precursor injection. CdTe: N was deposited by MOCVD injection during sublimation of CdTe. CdTe: As was deposited via MOVCD onto an existing sublimated CdSeTe layer to produce doped CdSeTe/CdTe devices. Nitrogen doping resulted in increased external quantum efficiency and an improved diode curve as compared to a device exposed to cadmium overpressure without the presence of MOVCD nitrogen.

引用

页码：0153 / 0156

页数：4

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