Defect structure changes in thin layers of semiconductors annealed under hydrostatic pressure

The effect of annealing under enhanced hydrostatic argon pressure (1.2 GPa) on the defect structure of thin GaAs:Be, InAs and AlGaAs and on the layers grown on GaAs substrates was investigated by X-ray diffraction methods. The strain state of the homoepitaxial. GaAs:Be layers remained unchanged after the high pressure-high temperature (HP-HT) treatment, but additional deflacts were created on primarily existing structural irregularities. The treatment of A(III)B(V) heterostructures resulted in the changed strain state and dislocation density, which are dependent on the bulk modulus of the layer and substrate materials.