Parametric sideband generation in CMOS-compatible oscillators from visible to telecom wavelengths

被引:27
|
作者
Domeneguetti, Renato R. [1 ]
Zhao, Yun [2 ]
Ji, Xingchen [2 ,3 ]
Martinelli, Marcelo [1 ]
Lipson, Michal [2 ,4 ]
Gaeta, Alexander L. [2 ,4 ]
Nussenzveig, Paulo [1 ]
机构
[1] Univ Sao Paulo, Inst Fis, POB 66318, BR-05315970 Sao Paulo, Brazil
[2] Columbia Univ, Dept Elect Engn, New York, NY 10027 USA
[3] Cornell Univ, Sch Elect & Comp Engn, Ithaca, NY 14853 USA
[4] Columbia Univ, Dept Appl Phys & Appl Math, New York, NY 10027 USA
来源
OPTICA | 2021年 / 8卷 / 03期
基金
巴西圣保罗研究基金会; 美国国家科学基金会;
关键词
FREQUENCY COMB GENERATION; NORMAL DISPERSION REGIME; MODULATION-INSTABILITY; GREEN; PUMP; RED;
D O I
10.1364/OPTICA.404755
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
We present an approach for generating widely separated first sidebands based solely on the four-wave-mixing process in optical parametric oscillators built on complementary metal-oxide-semiconductor-compatible photonic chips. Using higher-order transverse modes to perform dispersion engineering, we obtain zero-group-velocity dispersion near 796 nm. By pumping the chip in the normal dispersion region, at 795.6 nm, we generate a signal field in the visible band (at 546.2 nm) and the corresponding idler field in the telecom band (at 1465.3 nm), corresponding to a frequency span of approximately 346 THz. We show that the spectral position of signal and idler can be tailored by exploiting a delicate balance between second- and fourth-order dispersion terms. Furthermore, we explicitly demonstrate a change in the parametric oscillation dynamics when moving the pump field from the anomalous to normal dispersion, where the chip ceases producing multiple sidebands adjacent to the pump field and generates widely separated single sidebands. This provides a chip-scale platform for generating single-sideband fields separated by more than one octave, covering the visible and telecom spectral regions. (C) 2021 Optical Society of America under the terms of the OSA Open Access Publishing Agreement
引用
收藏
页码:316 / 322
页数:7
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