Magnetic properties and oxygen migration induced resistive switching effect in Y substituted multiferroic bismuth ferrite

Multiferroic Y-doped BiFeO3 (BY10FO) thin films were deposited on FTO coated glass substrate using sol-gel spin coating technique. Y-doping causes structural distortion without changing the structure of the parent BiFeO3 (rhombohedral: R3c). The M-H hysteresis curve reveals that the BY10FO film exhibits saturation magnetization at a low-coercive field by suppressing the spiral spin modulated structure. The bipolar resistive switching behavior has been investigated on a Ag/BY10FO/FTO hetero-structure through conventional I-V curve measurements and the device can produce an ON/OFF ratio of around 12 over 30 complete testing cycles. The space charge limited current and Schottky barrier emission conduction mechanism play a crucial role in switching the states between HRS and LRS. The impedance spectroscopy analysis at HRS and LRS confirms the significant degradation of resistance from M omega to k omega. The switching mechanism in the hetero-structure is due to migration and recombination of oxygen vacancies present in the film. The non-degradation of the Ag/BY10FO/FTO device after several testing cycles confirms that the switching of resistance between ON and OFF states is reproducible, reversible and controllable to be used for possible future non-volatile resistive random access memory application.