Reliability of tape automated bonding using Au-Sn alloy

被引:2
|
作者
Shibata, S
Kimura, M
机构
[1] Oki Electric Industry Co., Ltd., Hachioji
关键词
TAB; bump; finger; inner lead bonding; outer lead bonding;
D O I
10.1002/ecjb.4420790807
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
When too much bonding pressure is applied in inner lead bonding, the bonding characteristic of a finger in contact with a bonding tool edge tends to degrade. When bonding pressure exceeds 21.0 kg/mm(2), the finger penetrates a bump, causing damage in the AL pad. The size of the finger is much larger than that of the solder bump. However, if the bonding condition is appropriate, the bonded section is reliable. Adhesive thermal resistance for securing Cu fingers on the TAB tape determines the upper limit of inner lead-bonding temperature. The alloy is formed during bonding operation. The alloy formation is not sufficient at 380 degrees C, but it is sufficient at 500 degrees C. In outer lead bonding, bonding pressure should be controlled to prevent the substrate surface from cracking. Increasing pad length and width and reducing the temperature difference between the bonding tool and test piece were effective in preventing cracks. In both inner lead and outer lead bonding, the damage of fingers, separation of the bump from the pad, and substrate surface cracking must be taken into account in addition to the properties of the bonded area.
引用
收藏
页码:57 / 63
页数:7
相关论文
共 50 条
  • [1] Reliability of tape automated bonding using Au-Sn alloy
    Shibata, Susumu
    Kimura, Masaru
    Electronics and Communications in Japan, Part II: Electronics (English translation of Denshi Tsushin Gakkai Ronbunshi), 1996, 79 (08): : 57 - 63
  • [2] Reliability of hermetic RF MEMS wafer level packaging using Au-Sn eutectic bonding
    Wang, Qian
    Choa, Sung-Hoon
    Kim, WoonBae
    Hwang, Junsik
    Ham, Sukjin
    Moon, Changyoul
    EXPERIMENTAL MECHANICS IN NANO AND BIOTECHNOLOGY, PTS 1 AND 2, 2006, 326-328 : 609 - 612
  • [3] A Cu Pillar Bump Bonding Method Using Au-Sn Alloy Cap as the Interconnection Layer
    Hu, Yuhua
    Zhang, Yan
    Bao, Zuguo
    Wu, Jing
    Li, Jie
    Wu, Jie
    Huang, Min
    JOURNAL OF ELECTRONIC MATERIALS, 2024, 53 (04) : 1738 - 1751
  • [4] A Cu Pillar Bump Bonding Method Using Au-Sn Alloy Cap as the Interconnection Layer
    Yuhua Hu
    Yan Zhang
    Zuguo Bao
    Jing Wu
    Jie Li
    Jie Wu
    Min Huang
    Journal of Electronic Materials, 2024, 53 : 1414 - 1424
  • [5] Au-Sn SLID Bonding—Properties and Possibilities
    Torleif A. Tollefsen
    Andreas Larsson
    Ole Martin Løvvik
    Knut Aasmundtveit
    Metallurgical and Materials Transactions B, 2012, 43 : 397 - 405
  • [6] Au-Sn alloy prepared by mechanical alloying
    Li, Cai-Ju
    Tao, Jing-Mei
    Zhu, Xin-Kun
    Xu, Meng-Chun
    Chen, Tie-Li
    Cailiao Rechuli Xuebao/Transactions of Materials and Heat Treatment, 2010, 31 (04): : 40 - 44
  • [7] Au-Sn SLID Bonding-Properties and Possibilities
    Tollefsen, Torleif A.
    Larsson, Andreas
    Lovvik, Ole Martin
    Aasmundtveit, Knut
    METALLURGICAL AND MATERIALS TRANSACTIONS B-PROCESS METALLURGY AND MATERIALS PROCESSING SCIENCE, 2012, 43 (02): : 397 - 405
  • [8] Thin film Au-Sn bonding for optoelectronic integration
    Callahan, JJ
    Drabik, TJ
    Martin, KP
    Fan, C
    MICRO-OPTICS INTEGRATION AND ASSEMBLIES, 1998, 3289 : 68 - 73
  • [9] Mechanical reliability of transient liquid phase bonding of Au-Sn solder with Ni(Cu) substrates
    Peng, J.
    Wang, R. C.
    Liu, H. S.
    Li, J. Y.
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2018, 29 (01) : 313 - 322
  • [10] A Method for Fast Au-Sn Bonding at Low Temperature Using Thermal Gradient
    Wang, Wenchao
    Liu, Ziyu
    Qiu, Delong
    Zhu, Zhiyuan
    Yan, Na
    Ding, Shijin
    Zhang, David Wei
    MICROMACHINES, 2023, 14 (12)