Preparation of Fe-doped colloidal SiO2 abrasives and their chemical mechanical polishing behavior on sapphire substrates

被引:13
|
作者
Lei, Hong [1 ,2 ]
Gu, Qian [1 ]
Chen, Ruling [2 ]
Wang, Zhanyong [1 ]
机构
[1] Shanghai Inst Technol, Sch Mat Sci & Engn, Shanghai 201418, Peoples R China
[2] Shanghai Univ, Res Ctr Nanosci & Nanotechnol, Shanghai 200444, Peoples R China
基金
中国国家自然科学基金;
关键词
CMP; PLANARIZATION; REMOVAL;
D O I
10.1364/AO.54.007188
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Abrasives are one of key influencing factors on surface quality during chemical mechanical polishing (CMP). Silica sol, a widely used abrasive in CMP slurries for sapphire substrates, often causes lower material removal rate (MRRs). In the present paper, Fe-doped colloidal SiO2 composite abrasives were prepared by a seed-induced growth method in order to improve the MRR of sapphire substrates. The CMP performance of Fe-doped colloidal SiO2 abrasives on sapphire substrates was investigated using UNIPOL-1502 CMP equipment. Experimental results indicate that the Fe-doped colloidal SiO2 composite abrasives exhibit lower surface roughness and higher MRR than pure colloidal SiO2 abrasives for sapphire substrates under the same testing conditions. Furthermore, the acting mechanism of Fe-doped colloidal SiO2 composite abrasives in sapphire CMP was analyzed by x-ray photoelectron spectroscopy. Analytical results show that the Fe in the composite abrasives can react with the sapphire substrates to form aluminum ferrite (AlFeO3) during CMP, which promotes the chemical effect in CMP and leads to improvement of MRR. (C) 2015 Optical Society of America
引用
收藏
页码:7188 / 7194
页数:7
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