Growth rate of diamond on polycrystalline (110) diamond substrates from carbon disulfide in hydrogen by hot-filament-assisted chemical vapor deposition

The growth rates for the deposition of diamond by hot-filament-assisted chemical vapor deposition using carbon disulfide (CS2) in hydrogen and methane (CH4) in hydrogen were investigated on polished, [110] textured, polycrystalline diamond substrates. The carbon concentration in each system was varied from 1% to 2.5%. The deposition rate increased proportionately with carbon concentration for both systems, The CH4-H-2 system gave higher growth rates with an essentially constant difference in rate between CS2 and CH4. Possible explanations for this are discussed with the most likely either a catalytic effect of sulfur or sulfur-containing species on gas-phase homogeneous atomic hydrogen recombination, or the surface chemisorption of relatively less labile sulfur-containing species at the diamond surface.