Actinic detection of sub-100 nm defects on extreme ultraviolet lithography mask blanks

被引:14
|
作者
Jeong, ST [1 ]
Johnson, L
Rekawa, S
Walton, CC
Prisbrey, ST
Tejnil, E
Underwood, JH
Bokor, J
机构
[1] Univ Calif Berkeley, Lawrence Berkeley Lab, Ctr Xray Opt, Berkeley, CA 94720 USA
[2] Univ Calif Lawrence Livermore Natl Lab, Livermore, CA 94550 USA
[3] Intel Corp, Santa Clara, CA 95052 USA
[4] Univ Calif Berkeley, Dept EECS, Berkeley, CA 94720 USA
来源
关键词
D O I
10.1116/1.590944
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We present recent experimental results from a prototype actinic (operates at the 13 nm extreme ultraviolet wavelength) defect inspection system for extreme ultraviolet lithography mask blanks. The defect sensitivity of the current actinic inspection system is shown to reach 100 nm in experiments with programmed defects. A method to cross register and cross correlate between the actinic inspection system and a commercial visible-light scattering defect inspection system is also demonstrated. Thus, random, native defects identified using the visible-light tool can reliably be found and scanned by our actinic teal. We found that native defects as small as 86 nm (as classified by the visible-light tool) were detectable by the actinic tool. These results demonstrate the capability of this tool for independent defect counting experiments. (C) 1999 American Vacuum Society. [S0734-211X(99)10906-5].
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收藏
页码:3009 / 3013
页数:5
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