Low frequency conductance voltage analysis of Si/GexSi1-x/Si heterojunction bipolar transistors

被引：14
|
作者：
Neugroschel, A [1 ]
Li, GX [1 ]
Sah, CT [1 ]
机构：
[1] Univ Florida, Dept Elect & Comp Engn, Gainesville, FL 32611 USA
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2000年 / 47卷 / 01期
基金：
美国国家科学基金会;
关键词：
bipolar transistor; diffusion length; GeSiHBT; lifetime; mobility; transit time;
D O I：
10.1109/16.817585
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Low-frequency-conductance-voltage (LFGV) method for analysis of heterojunction bipolar transistors (HBT's) is presented. The method gives accurate quantitative values for the important minority-carrier transport parameters that underlie the transistor performance, such as the base diffusion length, lifetime, diffusion coefficient and transit time. The method also allows a detailed analysis of the current gain and emitter injection efficiency, The analytical model and experimental methodology are demonstrated for a Si/GexSi1-x/Si HBT with a trapezoidal and linearly graded Ge profiles in the base. The LFGV method is general and can be applied to other bipolar transistors, including those based on III-V materials.
引用
收藏
页码：187 / 196
页数：10
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