Large intermixing in the InGaP/InAlGaP laser structure using stress engineering at elevated temperature

被引:0
|
作者
Majid, Mohammed A. [1 ,2 ]
Al-Jabr, Ahmad A. [2 ]
ElAfandy, Rami T. [2 ]
Oubei, Hassan M. [2 ]
Anjum, Dalaver H. [3 ]
Shehata, Mohamed. [1 ]
Ng, Tien K. [2 ]
Ooi, Boon. S. [2 ]
机构
[1] Effat Univ, Elect & Comp Engn Dept, Jeddah 21478, Saudi Arabia
[2] KAUST, Photon Lab, Thuwal, Saudi Arabia
[3] KAUST, Adv Nanofabricat Imaging & Characterizat Core Fac, Thuwal 239556900, Saudi Arabia
来源
NOVEL IN-PLANE SEMICONDUCTOR LASERS XVIII | 2019年 / 10939卷
关键词
InGaP/InAlGaP; Visible lasers; Dielectric stress; Quantum well intermixing; Cycle annealing; DIODES;
D O I
10.1117/12.2511878
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this paper, a thermally induced dielectric strain on quantum well intermixing (QWI) technique is employed on tensile-strained InGaP/InAlGaP laser structure, to promote inter-diffusion, in conjunction with cycle annealing at elevated temperature. A bandgap blueshift as large as large as similar to 250meV was observed for samples capped with a single and bilayer of the dielectric film (1 mu m-SiO2 and 0.1 mu m-Si3N4) and annealed at a high temperature (700-1000 degrees C) for cycles of annealing steps. Samples subjected to this novel QWI technique for short duration and multiple cycle annealing steps shown a high degree of intermixing while maintaining strong photoluminescence (PL) intensity, narrow full wave at half maximum (FWHM) and good surface morphology. Laser devices fabricated using this technique, lased at a wavelength of 608nm with two facet power of similar to 46mW, indicating the high quality of the material. Our results show that thermal stress can be controlled by the engineering dielectric strain opening new perspectives for QWI of photonics devices.
引用
收藏
页数:7
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