Single-electron controlin solid state devices Preface

被引:24
|
作者
Splettstoesser, Janine
Haug, Rolf J.
机构
来源
关键词
D O I
10.1002/pssb.201770217
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页数:2
相关论文
共 50 条
  • [1] Single-electron devices
    Ahmed, H
    Nakazato, K
    MICROELECTRONIC ENGINEERING, 1996, 32 (1-4) : 297 - 315
  • [2] Single-electron devices
    Weis, J
    CFN LECTURES ON FUNCTIONAL NANOSTRUCTURES, VOL 1, 2005, 658 : 87 - 121
  • [3] Classification of single-electron devices
    Abramov, II
    Novik, EG
    SEMICONDUCTORS, 1999, 33 (11) : 1254 - 1259
  • [4] Single-electron tunneling devices
    Hadley, P
    LECTURES ON SUPERCONDUCTIVITY IN NETWORKS AND MESOSCOPIC SYSTEMS, 1998, (427): : 256 - 270
  • [5] Silicon single-electron devices
    Takahashi, Y
    Fujiwara, A
    Nagase, M
    Namatsu, H
    Kurihara, K
    Iwadate, K
    Murase, K
    INTERNATIONAL JOURNAL OF ELECTRONICS, 1999, 86 (05) : 605 - 639
  • [6] Single-electron devices and their applications
    Likharev, KK
    PROCEEDINGS OF THE IEEE, 1999, 87 (04) : 606 - 632
  • [7] Nanosilicon for single-electron devices
    Mizuta, H
    Furuta, Y
    Kamiya, T
    Tan, YT
    Durrani, ZAK
    Amakawa, S
    Nakazato, K
    Ahmed, H
    CURRENT APPLIED PHYSICS, 2004, 4 (2-4) : 98 - 101
  • [8] Silicon single-electron devices
    Takahashi, Y
    Ono, Y
    Fujiwara, A
    Inokawa, H
    JOURNAL OF PHYSICS-CONDENSED MATTER, 2002, 14 (39) : R995 - R1033
  • [9] Classification of single-electron devices
    I. I. Abramov
    E. G. Novik
    Semiconductors, 1999, 33 : 1254 - 1259
  • [10] Single-electron devices in silicon
    Schupp, Felix J.
    MATERIALS SCIENCE AND TECHNOLOGY, 2017, 33 (08) : 944 - 962