Numerical determination of one-dimensional energy bands bound to dislocations

被引:11
|
作者
Farvacque, JL [1 ]
François, P [1 ]
机构
[1] Univ Lille 1, CNRS UPRESA 8008, F-59650 Villeneuve Dascq, France
关键词
electronic levels; dislocations;
D O I
10.1016/S0921-4526(99)00609-2
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
It is assumed that the dislocation binding potential issues from their strain field through the deformation potential and the piezoelectric coupling. Dislocation states are then determined by solving the envelop function Schrodinger equation by means of a standard numerical method which consists in making a plane wave decomposition of the components of the spinor wave function. Numerical results give relatively strong binding energies and large 1D effective masses, in the case of the valence band, leading probably to large effects on the doping possibilities for large dislocation densities. (C) 1999 Elsevier Science B.V. All rights reserved.
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页码:995 / 998
页数:4
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