Nanoindentation-induced phase transformation between SiC polymorphs

被引：5
|
作者：
Yao, Tingting [1 ]
Yin, Deqiang [2 ]
Saito, Mitsuhiro [3 ,4 ]
Wu, Bo [1 ]
Chen, Chunlin [1 ]
Ma, Xiuliang [1 ]
机构：
[1] Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Liaoning, Peoples R China
[2] Chongqing Univ, Coll Aerosp Engn, Chongqing 400044, Peoples R China
[3] Tohoku Univ, Adv Inst Mat Res, Sendai, Miyagi 9808577, Japan
[4] Univ Tokyo, Inst Engn Innovat, Tokyo 1160013, Japan
来源：
MATERIALS LETTERS | 2018年 / 220卷
基金：
中国国家自然科学基金;
关键词：
SiC; Phase transition; Interfaces; Simulation and modelling; Nanoindentation; SILICON-CARBIDE; POLYTYPES; MOLECULES; 4H;
D O I：
10.1016/j.matlet.2018.03.032
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Nanoindentation-induced phase transformation between silicon carbide (SiC) polymorphs has been investigated by a combined study of transmission electron microscopy and first principles calculations. In situ nanoindentation of 4H-SiC single crystals revealed the occurrence of a phase transformation from 4H to 3C in the vicinity of a crack. First principles calculations pointed out an extremely low energy barrier for this phase transformation, which could be attributed to the very smooth transition in the atomic and electronic structures across the 3C/4H interface. The phase transformation from 4H to 3C may retard the propagation of cracks and reduce the band gap of SiC. (C) 2018 Elsevier B.V. All rights reserved.
引用
收藏
页码：152 / 155
页数：4
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