Optical properties of Ga1-xInxAs/GaAs(001) quantum well superlattices:: Exciton and polariton dispersion curves

被引：0
|
作者：
Tomassini, N [1 ]
D'Andrea, A [1 ]
Pilozzi, L [1 ]
Schiumarini, D [1 ]
机构：
[1] CNR, Ist Metodol Inogan & Plasmi, I-00016 Monterotondo, Italy
来源：
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 1, NO 6 | 2004年 / 1卷 / 06期
关键词：
D O I：
10.1002/pssc.200304077
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
Wannier exciton wavefunctions and energies have been computed in superlattices of strained Ga1-xInxAs/GaAs(001) quantum wells (SLQWs) using Luttinger Hamiltonian and accurate variational envelope functions. Exciton dispersion curves of the SLQWs are then obtained by computing exciton energies for different K-points of the corresponding first Brillouin zone. Photon dispersion curves, due to the background dielectric constant modulation, and the polariton dispersion curves have been computed in the semiclassical self-consistent framework. The results are discussed for the case of exciton energies far from the photonic gaps. (C) 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码：1403 / 1409
页数：7
相关论文
共 50 条
  • [1] Exciton relaxation in Ga1-xInxAs/GaAs self-organized quantum dots
    Shen, JX
    Oka, Y
    Cheng, HH
    Tsai, FY
    Lee, CP
    SUPERLATTICES AND MICROSTRUCTURES, 1999, 25 (1-2) : 131 - 136
  • [2] Interdiffusion of GaAs/Ga1-xInxAs quantum wells
    1600, (73):
  • [3] EXCITON-BINDING-ENERGY MAXIMUM IN GA1-XINXAS/GAAS QUANTUM-WELLS
    HAINES, MJLS
    AHMED, N
    ADAMS, SJA
    MITCHELL, K
    AGOOL, IR
    PIDGEON, CR
    CAVENETT, BC
    OREILLY, EP
    GHITI, A
    EMENY, MT
    PHYSICAL REVIEW B, 1991, 43 (14): : 11944 - 11949
  • [4] INTERDIFFUSION OF GAAS/GA1-XINXAS QUANTUM-WELLS
    TAYLOR, WJ
    KUWATA, N
    YOSHIDA, I
    KATSUYAMA, T
    HAYASHI, H
    JOURNAL OF APPLIED PHYSICS, 1993, 73 (12) : 8653 - 8655
  • [5] Exciton and polariton dispersion curves of InxGa1-xAs/GaAs(001) superlattice quantum wells:: Model calculation
    Tomassini, N.
    Schiumarini, D.
    Pilozzi, L.
    Andrea, A. D.
    PHYSICAL REVIEW B, 2007, 75 (08):
  • [6] STRAIN RELEASE IN GAAS/GA1-XINXAS STRAINED LAYER SUPERLATTICES GROWN ON (112) SUBSTRATES
    MITCHELL, TE
    UNAL, O
    INSTITUTE OF PHYSICS CONFERENCE SERIES, 1991, (117): : 589 - 594
  • [7] Diffraction anomalous fine-structure study of strained Ga1-xInxAs on GaAs(001)
    Woicik, JC
    Cross, JO
    Bouldin, CE
    Ravel, B
    Pellegrino, JG
    Steiner, B
    Bompadre, SG
    Sorensen, LB
    Miyano, KE
    Kirkland, JP
    PHYSICAL REVIEW B, 1998, 58 (08): : R4215 - R4218
  • [8] Surface and bulk origin of the optical anisotropy of As-rich GaAs(001) and Ga1-xInxAs(001) -: art. no. 245313
    Paget, D
    Hogan, C
    Berkovits, VL
    Tereshchenko, OE
    PHYSICAL REVIEW B, 2003, 67 (24)
  • [9] MODULATED PHOTOABSORPTION IN STRAINED GA1-XINXAS/GAAS MULTIPLE QUANTUM-WELLS
    SELA, I
    WATKINS, DE
    LAURICH, BK
    SMITH, DL
    SUBBANNA, S
    KROEMER, H
    PHYSICAL REVIEW B, 1991, 43 (14) : 11884 - 11892
  • [10] GA1-XINXAS/GAAS QUANTUM WELLS GROWN BY ORGANOMETALLIC CHEMICAL VAPOR-DEPOSITION
    GERSHONI, D
    CHU, SNG
    VANDENBERG, JM
    TEMKIN, H
    CHIN, AK
    GAVRILOVIC, P
    STUTIUS, W
    WILLIAMS, J
    JOURNAL OF ELECTRONIC MATERIALS, 1988, 17 (04) : S38 - S38
12345