Influence of boron on diamond growth on WC-Co hardmetals

被引：21
|
作者：
Kalss, W
Bohr, S
Haubner, R
Lux, B
Griesser, M
Spicka, H
Grasserbauer, M
Wurzinger, P
机构：
[1] VIENNA TECH UNIV,INST ANALYT CHEM,A-1060 VIENNA,AUSTRIA
[2] VIENNA TECH UNIV,INST APPL & TECH PHYS,A-1040 VIENNA,AUSTRIA
来源：
INTERNATIONAL JOURNAL OF REFRACTORY METALS & HARD MATERIALS | 1996年 / 14卷 / 1-3期
基金：
奥地利科学基金会;
关键词：
D O I：
10.1016/0263-4368(96)83427-5
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Diamond coatings were produced by the hot-filament method, adding B(C2H5)(3) to the gas phase. We compared the results on WC-Co hardmetal and Si substrates. SIMS-measurements revealed high B contents in diamond layers on WC-Co substrates accompanied by high amounts of Co. TEM showed CoB and Co2B inclusions in the diamond layer. Furthermore, B-diffusion in the WC-Co bulk was shown. On Si substrates, crystal quality and growth rate decreased at high B concentrations. Higher B contents were found in the diamond layer than were used in the gas phase.
引用
收藏
页码：137 / 144
页数：8
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