Observation of microwave induced resistance and photovoltage oscillations in MgZnO/ZnO heterostructures

被引：30

作者：

Kaercher, D. F. ^{[1
]}

Shchepetilnikov, A. V. ^{[2
]}

Nefyodov, Yu. A. ^{[2
]}

Falson, J. ^{[1
,3
,4
]}

Dmitriev, I. A. ^{[1
,5
]}

Kozuka, Y. ^{[3
,4
]}

Maryenko, D. ^{[6
]}

Tsukazaki, A. ^{[7
,8
]}

Dorozhkin, S. I. ^{[2
]}

Kukushkin, I. V. ^{[2
]}

Kawasaki, M. ^{[3
,4
,6
]}

Smet, J. H. ^{[1
]}

机构：

[1] Max Planck Inst Solid State Res, D-70569 Stuttgart, Germany

[2] Russian Acad Sci, Inst Solid State Phys, Chernogolovka 142432, Moscow District, Russia

[3] Univ Tokyo, Dept Appl Phys, Tokyo 1138656, Japan

[4] Univ Tokyo, QPEC, Tokyo 1138656, Japan

[5] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

[6] RIKEN Ctr Emergent Matter Sci CEMS, Wako, Saitama 3510198, Japan

[7] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan

[8] Japan Sci & Technol Agcy JST, PRESTO, Tokyo 1020075, Japan

来源：

PHYSICAL REVIEW B | 2016年 / 93卷 / 04期

基金：

俄罗斯科学基金会; 日本学术振兴会;

关键词：

2-DIMENSIONAL ELECTRON-GAS; MAGNETIC-FIELD; RADIATION; SYSTEM; STATES;

D O I：

10.1103/PhysRevB.93.041410

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Microwave induced resistance and photovoltage oscillations were investigated in MgxZn1-xO/ZnO heterostructures. The physics of these oscillations is controlled significantly by scattering mechanisms, and therefore these experiments were motivated by the recently achieved high quality levels in this material and the apparent dominance of large angle, short-range scattering, which is distinct from the prevailing small angle scattering in state-of-the-art GaAs structures. Within the studied frequency range of 35-120 GHz, up to four oscillations were resolved at 1.4 K temperature, but only in high density samples. This allowed us to extract the value of the effective electron mass m* = (0.35 +/- 0.01)m(0), which is enhanced over the bare band mass, and estimate a local quantum scattering time of about 5 ps.

引用

页数：5

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