Modeling of germanium atomic-layer-epitaxy

被引:6
|
作者
Sugahara, S
Matsumura, M
机构
[1] Department of Physical Electronics, Tokyo Institute of Technology, Tokyo 152, 2-12-1 O-okayama, Meguro-ku
关键词
D O I
10.1016/S0169-4332(96)01027-6
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Atomic-layer-epitaxy (ALE) of germanium has been analyzed by a kinetic model and a thermodynamic model. Chlorogermanes are found to be unsuitable since they cannot satisfy the self-limiting absorption condition due to quick thermal desorption of HCl from the surface. On the other hand, the ideal growth rate of one monolayer per cycle is expected for dimethylgermane. This is because there exists no recombinative desorption reaction between surface methyl groups and H that will break the self-limiting adsorption condition. It has also been confirmed, from thermodynamic considerations, that the elemental chemical reactions used in this ALE, i.e., self-limiting adsorption and reduction of surface methyl groups by atomic hydrogen, are spontaneous.
引用
收藏
页码:176 / 186
页数:11
相关论文
共 50 条
  • [1] Modeling of germanium atomic-layer-epitaxy
    Sugahara, Satoshi
    Matsumura, Masakiyo
    Applied Surface Science, 1997, 112 : 176 - 186
  • [2] Modeling of silicon atomic-layer-epitaxy
    Sugahara, S
    Hasunuma, E
    Imai, S
    Matsumura, M
    APPLIED SURFACE SCIENCE, 1996, 107 : 161 - 171
  • [3] Atomic-layer-epitaxy of Si
    Ikeda, K
    Yanase, J
    Sugahara, S
    Matsumura, M
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2001, 39 : S447 - S458
  • [4] Hydrogen-induced abstraction mechanism of surface methyl groups in atomic-layer-epitaxy of germanium
    Sugahara, S
    Hosaka, K
    Matsumura, M
    APPLIED SURFACE SCIENCE, 1998, 130 : 327 - 333
  • [5] ATOMIC LAYER EPITAXY OF GERMANIUM
    SUGAHARA, S
    KITAMURA, T
    IMAI, S
    MATSUMURA, M
    APPLIED SURFACE SCIENCE, 1994, 82-3 (1-4) : 380 - 386
  • [6] Effects of GaN template on atomic-layer-epitaxy growth of ZnO
    Saito, K
    Nagayama, K
    Hosokai, Y
    Ishida, K
    Takahashi, K
    11TH INTERNATIONAL CONFERENCE ON II-VI COMPOUNDS (II-VI 2003), PROCEEDINGS, 2004, 1 (04): : 969 - 972
  • [7] Gas-phase-reaction-controlled atomic-layer-epitaxy of silicon
    Hasunuma, E
    Sugahara, S
    Hoshino, S
    Imai, S
    Ikeda, K
    Matsumura, M
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1998, 16 (02): : 679 - 684
  • [9] GERMANIUM ATOMIC LAYER EPITAXY CONTROLLED BY SURFACE CHEMICAL-REACTIONS
    TAKAHASHI, Y
    ISHII, H
    FUJINAGA, K
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1989, 136 (06) : 1826 - 1827
  • [10] ATOMIC LAYER-BY-LAYER EPITAXY OF SILICON AND GERMANIUM USING FLASH HEATING IN CVD
    MUROTA, J
    SAKURABA, M
    WATANABE, T
    MATSUURA, T
    SAWADA, Y
    JOURNAL DE PHYSIQUE IV, 1995, 5 (C5): : 1101 - 1108