Ultraviolet Lasing Characteristics of a GaN Photonic Crystal Defect Emitter

被引：0
|
作者：
Lai, Chun-Feng [1 ]
Yu, Peichen [1 ]
Wang, Te-Chung [1 ]
Kuo, Hao-Chung [1 ]
Lu, Tien-Chang [1 ]
Wang, Shing-Chung [1 ]
Lee, Chao-Kuei [2 ]
机构：
[1] Natl Chiao Tung Univ, Dept Photon, Hsinchu, Taiwan
[2] Natl Sun Yat Sen Univ, Inst Elect Opt Engn, Kaohsiung, Taiwan
来源：
2007 CONFERENCE ON LASERS & ELECTRO-OPTICS/QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE (CLEO/QELS 2007), VOLS 1-5 | 2007年
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The fabricated GaN photonic crystal defect emitter demonstrated multimode lasing with a low optical pumping threshold of pulse engergy similar to 0.15 mu J. The device exhibited high spectral purity and enhanced spontaneous emission factor, beta similar to 0.045. (C) 2006 Optical Society of America
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页码：1063 / +
页数：2
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