Numerical simulation of the temperature distribution in a planetary MOCVD reactor

被引:10
|
作者
Tsai, Ming-Lun [1 ]
Fang, Cheng-Chia [1 ]
Lee, Lung-Yu [2 ]
机构
[1] Pinecone Mat Inc, Dept Res & Design, Hsinchu 30077, Taiwan
[2] Cadmen Taiwan Autodesign Co, New Taipei City, Taiwan
关键词
Metalorganic chemical vapor deposition (MOCVD); Numerical simulation; Planetary reactor; Temperature distribution; Thermal analysis; RADIANT-HEAT TRANSFER; FINITE-VOLUME METHOD; DEPOSITION; GROWTH;
D O I
10.1016/j.cep.2014.04.001
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
In this study, a planetary MOCVD reactor was thermally analyzed and a numerical model was proposed to predict an actual thermal distribution, comparing the results between the numerical simulation and experiment. Numerical simulations were performed for various modifications, namely, the ceiling design and heat shield layout, to improve the heating efficiency. The reactors comprising the ceiling design and modified heat shield layout conserved 15% and 5% of the heating energy, respectively. This study provides a method for predicting the temperature distribution inside MOCVD chambers and evaluating the heating efficiency yielded by design modifications. These results could be used to expand and consolidate the design engineering knowledge database. (C) 2014 Elsevier B.V. All rights reserved.
引用
收藏
页码:48 / 58
页数:11
相关论文
共 50 条
  • [1] Numerical simulation of flow and temperature field in MOCVD reactor
    Key Laboratory of Optic-Communication and Lightwave Technologies, Beijing University of Posts and Telecommunications, Beijing 100876, China
    Rengong Jingti Xuebao, 2008, 6 (1342-1348): : 1342 - 1348
  • [2] Numerical simulation of return flow in MOCVD reactor
    Zhang, Jiawen
    Gao, Hongkai
    Zhang, Jikang
    Yang, Yong
    Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 1994, 15 (04): : 268 - 272
  • [3] Uniformity analysis of temperature distribution in an industrial MOCVD reactor
    Zheng, Jiang
    Fang, Haisheng
    Zhang, Zhi
    Yang, Jinzhe
    Gan, Zhiyin
    Yan, Han
    CRYSTAL RESEARCH AND TECHNOLOGY, 2016, 51 (10) : 617 - 626
  • [4] CFD numerical simulation and optimization of GaN-MOCVD reactor
    Yang, Yun-Ke
    Gao, Li-Hua
    Chen, Hai-Xin
    Fu, Song
    Gongcheng Lixue/Engineering Mechanics, 2007, 24 (09): : 173 - 178
  • [5] Numerical simulation of vortex distribution in horizontal MOCVD reactors
    Jin, Xizhuo
    Cong, Zhixian
    Liu, Mingdeng
    Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 1993, 14 (01): : 21 - 27
  • [6] Equipment and process simulation of compound semiconductor MOCVD in the production scale multiwafer planetary reactor
    Dauelsberg, M
    Deufel, M
    Reinhold, M
    Strauch, G
    Bergunde, T
    SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES 2001, 2001, : 128 - 131
  • [7] Numerical simulation and analysis of process parameters of GaN-MOCVD reactor
    Li, Jian
    Wang, Jie
    Cai, Jian-dong
    Xu, Yi-feng
    Fan, Bing-feng
    Wang, Gang
    INTERNATIONAL COMMUNICATIONS IN HEAT AND MASS TRANSFER, 2018, 91 : 64 - 76
  • [8] Simulation of the MOCVD reactor for ZnO growth
    Liu, SM
    Gu, SL
    Qin, F
    Zhu, SM
    Ye, JD
    Liu, W
    Zhou, X
    Zhang, R
    Shi, Y
    Zheng, YD
    PRICM 5: THE FIFTH PACIFIC RIM INTERNATIONAL CONFERENCE ON ADVANCED MATERIALS AND PROCESSING, PTS 1-5, 2005, 475-479 : 1833 - 1836
  • [9] Design and numerical simulation of a multi-wafer hot-wall MOCVD reactor
    Peng, Xin-Xin
    Zuo, Ran
    Yu, Hai-Qun
    Chen, Jing-Sheng
    Rengong Jingti Xuebao/Journal of Synthetic Crystals, 2011, 40 (01): : 207 - 212
  • [10] Numerical simulation of liquid velocity distribution in a sonochemical reactor
    Xu, Zheng
    Yasuda, Keiji
    Koda, Shinobu
    ULTRASONICS SONOCHEMISTRY, 2013, 20 (01) : 452 - 459