Design, Simulation and Modeling of High Q RF MEMS Inductor

被引：0
|
作者：
Rahimi, M. [1 ]
Jamuar, S. S. [1 ]
Hamidon, M. N. [1 ]
Ahmad, M. R. [2 ]
Mousavi, S. A. [1 ]
Bayat, M. [1 ]
机构：
[1] Univ Putra Malaysia, Fac Engn, Dept Elect & Elect Engn, Upm Serdang 43400, Selangor DE, Malaysia
[2] MIMOS Berhad, Kuala Lumpur 57000, Malaysia
来源：
INTERNATIONAL REVIEW OF ELECTRICAL ENGINEERING-IREE | 2008年 / 3卷 / 06期
关键词：
Spiral Inductor; Inductor model; Qualily factor; CMOS compatible inductor; Microelectromechanical systems (MEMS);
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Silicon integrated circuit spiral inductors and transformers are finding wide ranging applications in RF circuits. This paper presents implementation and characterization of spiral inductor using MEMS technology on silicon substrate for use in design of voltage controlled oscillator (VCO). MEMS inductors have been realized from the CMOS-compatible MEMS process. Suspended inductor has been employed in design to avoid substrate coupling. The dimensions of the inductor have been obtained using the Greenhouse formula 7 he inductors have been simulated using CoventorWare software. The Yue's model has been applied to compute lumped equivalent parameters and Q factor of the inductors. The resultant value of inductance and Q factor are 2.87nH and 27 respectively at 2.4 GHz, which are in good agreement with the results of Greenhouse formula. Copyright (C) 2008 Praise Worthy Prize S.r.l. - All rights reserved.
引用
收藏
页码：1048 / 1053
页数：6
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