Modified metal-induced lateral crystallization using amorphous Ge/Si layered structure

被引：18
|
作者：
Kanno, H [1 ]
Kenjo, A [1 ]
Sadoh, T [1 ]
Miyao, M [1 ]
机构：
[1] Kyushu Univ, Dept Elect, Fukuoka 8128581, Japan
来源：
APPLIED PHYSICS LETTERS | 2004年 / 85卷 / 06期
关键词：
D O I：
10.1063/1.1780595
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Modified metal-induced lateral crystallization (MILC) using a-Ge/a-Si/Ni/SiO2 layered structures has been investigated. MILC growth velocity in the a-Ge/a-Si layered structures was enhanced by three times compared with that in the a-Si single layers. As a result, poly-Si films with large areas (similar to10 mum) were obtained in a short time annealing (<5 h) at 550 degreesC. It is speculated that crystal nucleation in the a-Ge layers stimulated the bond rearrangement in the a-Si layers, which enhanced the MILC velocity. This will be a powerful tool for realizing large poly-Si areas on insulating films for future system-in-displays. (C) 2004 American Institute of Physics.
引用
收藏
页码：899 / 901
页数：3
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