Lithium fluoride injection layers can form quasi-Ohmic contacts for both holes and electrons

被引:15
|
作者
Bory, Benjamin F. [1 ]
Rocha, Paulo R. F. [2 ,3 ]
Janssen, Rene A. J. [1 ]
Gomes, Henrique L. [2 ,3 ]
De Leeuw, Dago M. [4 ,5 ]
Meskers, Stefan C. J. [1 ]
机构
[1] Eindhoven Univ Technol, Mol Mat & Nanosyst & Inst Complex Mol Syst, NL-5600 MB Eindhoven, Netherlands
[2] Inst Telecomunicacoes, P-1049001 Lisbon, Portugal
[3] Univ Algarve, P-8005139 Faro, Portugal
[4] Max Planck Inst Polymer Res, D-55128 Mainz, Germany
[5] King Abdulaziz Univ, Jeddah 21413, Saudi Arabia
关键词
LIGHT-EMITTING-DIODES; ALKALI-HALIDES; AL/LIF ELECTRODE; EXCITATION;
D O I
10.1063/1.4896636
中图分类号
O59 [应用物理学];
学科分类号
摘要
Thin LiF interlayers are typically used in organic light-emitting diodes to enhance the electron injection. Here, we show that the effective work function of a contact with a LiF interlayer can be either raised or lowered depending on the history of the applied bias. Formation of quasi-Ohmic contacts for both electrons and holes is demonstrated by electroluminescence from symmetric LiF/polymer/LiF diodes in both bias polarities. The origin of the dynamic switching is charging of electrically induced Frenkel defects. The current density-electroluminescence-voltage characteristics can qualitatively be explained. The interpretation is corroborated by unipolar memristive switching and by bias dependent reflection measurements. (C) 2014 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.
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页数:4
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