Characterization of midwave infrared InAs/GaSb superlattice photodiode

被引：36

作者：

Cervera, C. ^{[1
]}

Rodriguez, J. B. ^{[1
]}

Chaghi, R. ^{[1
]}

Ait-Kaci, H. ^{[1
]}

Christol, P. ^{[1
]}

机构：

[1] Univ Montpellier 2, IES, UMR CNRS 5214, F-34095 Montpellier 05, France

来源：

JOURNAL OF APPLIED PHYSICS | 2009年 / 106卷 / 02期

关键词：

II SUPERLATTICES; PHOTOVOLTAIC DETECTOR; INTERFACE; GASB; INAS; GROWTH; MBE;

D O I：

10.1063/1.3174439

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on structural, electrical, and optical characterizations of midwave infrared InAs/GaSb superlattice (SL) p-i-n photodiodes. High-quality SL samples, with 1 mu m thick active region (220 SL periods), exhibited a cut-off wavelength of 4.9 mu m at 80 K. Using a capacitance-voltage measurement technique performed on mesa diode, the residual background concentration in the nonintentionally doped region was determined to be 3 X 10(15) cm(-3) at 80 K. Extracted from current-voltage characteristics, R(0)A products above 4 X 10(5) Omega cm(2) at 80 K were measured, and the quantitative analysis of the J-V curves showed that the dark current density of SL photodiode is dominated by generation-recombination processes. Front-side illuminated photodiodes produced responsivity at 80 K equal to 360 mA/W at 4.5 mu m. (C) 2009 American Institute of Physics. [DOI: 10.1063/1.3174439]

引用

页数：5

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