InAs/InGaAs/GaAs coupled quantum dot laser with predeposited InAs seed layer

被引：2

作者：

Lee, Chi-Sen

Chang, Fu-Yu

Liu, Day-Shan

Lin, Hao-Hsiung ^{[1
]}

机构：

[1] Natl Taiwan Univ, Grad Inst Elect Engn, Taipei 10764, Taiwan

[2] Natl Taiwan Univ, Dept Elect Engn, Taipei 10764, Taiwan

[3] Natl Formosa Univ, Inst Electro Opt & Mat Sci, Huwei, Taiwan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2006年 / 45卷 / 8A期

关键词：

molecular beam epitaxy; coupled quantum dot; quantum dot; quantum dot laser;

D O I：

10.1143/JJAP.45.6271

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report a coupled quantum dot (QD) structure for long wavelength laser applications. The structure comprises an InAs seed layer and a second InAs QD layer capped with an In0.33Ga0.67As capping layer. Cross-sectional transmission electron microscopy (TEM) images show a vertical alignment between the QD stacks, which causes the coupled QD sample to have a larger dot size and a lower dot density than the control sample. The laser with the coupled QD structure exhibits a markedly longer emission wavelength and a slightly higher threshold current density than lasers with a conventional QD structure, indicating that the coupled QD structure has potential for long wavelength applications.

引用

页码：6271 / 6274

页数：4

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