Scattering of Charge Carriers in Thin Films PbTe: Bi

被引：0
|
作者：
Dzumedzey, R. O. [1 ]
机构：
[1] Vasyl Stefanyk Precarpathian Natl Univ, 57 Shevchenko Str, UA-76018 Ivano Frankivsk, Ukraine
来源：
PHYSICS AND CHEMISTRY OF SOLID STATE | 2019年 / 20卷 / 02期
关键词：
Lead telluride; doping; scattering of charge carriers; mobility; THERMOELECTRIC FIGURE; ENHANCEMENT; MERIT; BULK;
D O I：
10.15330/pcss.20.2.171-174
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The calculations of the scattering mechanisms of charge carriers in thin films of PbTe:Bi with 1 at. % of bismuth is carried out. The dominant mechanisms of scattering in the investigated samples are determined. The thickness dependence of the ratio mu(surf)/mu(bulk) is considered.
引用
收藏
页码：171 / 174
页数：4
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