Nano-structure analysis of Fe implanted SnO2 films by 57Fe and 119Sn CEMS

被引：0
|
作者：
Nomura, Kiyoshi [1 ]
Reuther, Helfried [2 ]
机构：
[1] Univ Tokyo, Sch Engn, Bunkyo Ku, Hongo 7-3-1, Tokyo, Japan
[2] Forschungszentrum Dresden Rossendorf EV, Dresden, Germany
来源：
ISIAME 2008 | 2009年
关键词：
SnO2; film; Fe ion implantation; Diluted magnetic semiconductor (DMS); Fe-57 and Sn-119 CEMS; Kerr effect; FERROMAGNETISM;
D O I：
10.1007/978-3-642-01369-0_65
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
SnO2 films were implanted with Fe-57 at substrate temperatures of room temperature and 300 degrees C. The chemical states of Fe and Sn were characterized by Fe-57 CEMS and Sn-119 CEMS, respectively. The implanted Fe species exist as Fe-(II) and Fe-(III) in SnO2 films, which also are reduced into Sn-(II) on the implanted surface. The as prepared and post annealed at 500 degrees C samples did not show Kerr effect, but the sample implanted with 1 x 10(17) Fe ions/cm(2) at 300 degrees C showed Kerr effect although magnetic sextets were not clearly observed in the Fe-57 CEM spectra. The Kerr effect disappeared after annealing. It suggests that the number of magnetic defects decreases by absorption of oxygen. Magnetic relaxation appeared in the case of low implantation of 5 x 10(16) Fe ions/cm(2), which is considered to be due to antiferromagnetism or paramagnetic relaxation.
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页码：489 / +
页数：2
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