Microstructure evolution during silicon oxidation at room temperature under composite ion beam irradiation

被引：2

作者：

Prikhodko, K. E. ^{[1
,2
]}

Gurovich, B. A. ^{[1
]}

Komarov, D. A. ^{[1
]}

Goncharova, D. A. ^{[1
]}

Kutuzov, L. V. ^{[1
]}

机构：

[1] Kurchatov Inst, Natl Res Ctr, Moscow 123182, Russia

[2] Natl Res Nucl Univ MEPhl, Moscow 115409, Russia

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2014年 / 326卷

关键词：

Silicon oxidation; Composite ion beam irradiation; Selective attachment of atoms; Ion beam irradiation; Low energy EELS; EFTEM;

D O I：

10.1016/j.nimb.2013.10.059

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

In this work, we studied the silicon microstructure evolution during its oxidation under composite beam ion irradiation at room temperature. It was found that when the composite ion beam was formed by hydrogen and dry oxygen mixture at low doses (similar to 10(18) cm(-2)), a porous silicon layer was formed. During irradiation, the pore size gradually reduced and at a dose of similar to 10(20)cm(-2) pores disappear completely, and an uniform layer of silicon oxide was formed. If residual gases and hydrogen are used to generate a composite ion beam, the formation of porous silicon is not found. The final thickness of irradiation-induced silicon oxide corresponded to the projected range of protons at a given energy in both cases. (C) 2014 Elsevier B.V. All rights reserved.

引用

页码：273 / 277

页数：5

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