Near and middle infrared dual band operation of InGaAs/InP quantum well infrared photodetector

被引：15
|
作者：
Liu, HC [1 ]
Song, CY
Dupont, E
Poole, P
Wilson, PH
Robinson, BJ
Thompson, DA
机构：
[1] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada
[2] McMaster Univ, Ctr Electrophoton Mat & Devices, Hamilton, ON L8S 4L7, Canada
来源：
ELECTRONICS LETTERS | 1999年 / 35卷 / 23期
关键词：
D O I：
10.1049/el:19991395
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An investigation is presented into the dual band operation of an InGaAs/InP quantum well infrared photodetector for both near and middle infrared spectra. The detector performance is evaluated and analysed. It is found that such devices are potentially useful for applications involving dual band simultaneous detection and imaging.
引用
收藏
页码：2055 / 2056
页数：2
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