Jahn-Teller coupling at the silicon vacancy

被引:3
|
作者
Anderson, FG
机构
[1] Department of Physics, University of Vermont, Burlington
关键词
Jahn-Teller coupling; Si; vacancy; EPR;
D O I
10.1524/zpch.1997.200.Part_1_2.177
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The one-electron linear Jahn-Teller coupling model for the silicon vacancy fails to explain three key features of the negative charge state: the symmetry and hyperfine interaction for the ground state, the existence of six equivalent distortions, and the difference in the activation energies for the trigonal and tetragonal distortion reorientations. The inclusion of higher-order Jahn-Teller coupling can remedy these failures by splitting the degeneracy between the (Q(theta),Q(zeta)) type distortions involving an elongation along the tetragonal axis and those involving a compression along the tetragonal axis. One such higher-order coupling scheme is detailed.
引用
收藏
页码:177 / 185
页数:9
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