Twinning in Cu(In,Ga)S2

被引：2
|
作者：
Cieslak, Janko [1 ]
Hahn, Thomas [1 ]
Kraeusslich, Juergen [2 ]
Metzner, Heiner [1 ]
Eberhardt, Jens [1 ]
Witthuhn, Wolfgang [1 ]
机构：
[1] Univ Jena, Inst Festkorperphys, Max Wien Pl 1, D-07743 Jena, Germany
[2] Univ Jena, Inst Opt & Quantenelekt, Jena 07743, Germany
来源：
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, NO 5 | 2009年 / 6卷 / 05期
关键词：
CUGAS2; THIN-FILMS; STRUCTURAL-PROPERTIES; EPITAXIAL-GROWTH; CUINS2; FILMS; SI(111); SI; DEPOSITION; GAAS;
D O I：
10.1002/pssc.200881194
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Epitaxial thin films of CuIn1-xGaxS2 (0 <= x <= 1) were grown on single-crystalline (111)(cub)-oriented silicon substrates by means of molecular beam epitaxy from elemental sources. Employing reflection high energy electron diffraction and Rutherford backscattering spectroscopy the twinning characteristics and the composition of the films were determined, respectively. X-ray diffraction measurements in transmission geometry were performed to determine the lattice mismatch to the substrate. The degree of twinning of the epitaxial films shows a highly non-linear dependence on their gallium content x. The transition point between high twinning regime (low gallium content) and low twinning regime (high gallium content) is at x(t) = 0.74. The twinning characteristics are discussed and compared to lattice mismatch and metastable ordering types. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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页码：1023 / +
页数：2
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