Bulk contributions to tunnel magnetoresistance in magnetic tunnel junctions -: art. no. 094423

被引:19
|
作者
Zhu, T [1 ]
Xiang, X
Shen, F
Zhang, Z
Landry, G
Dimitrov, DV
García, N
Xiao, JQ
机构
[1] Univ Delaware, Dept Phys & Astron, Newark, DE 19716 USA
[2] Chinese Acad Sci, Inst Phys, State Key Lab Magnetism, Beijing 100080, Peoples R China
[3] Chinese Acad Sci, Inst Phys, Beijing Lab Electron Microscopy, Beijing 100080, Peoples R China
[4] Seagate Technol Inc, Bloomington, MN 55435 USA
[5] CSIC, Lab Fis Sistemas Pequenos & Nanotecnol, E-28006 Madrid, Spain
来源
PHYSICAL REVIEW B | 2002年 / 66卷 / 09期
关键词
D O I
10.1103/PhysRevB.66.094423
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We have carefully designed an experiment to elucidate the interface and bulk contributions to spin-polarized transport in CoFe-based magnetic tunnel junctions (MTJ's). We demonstrated that the bulklike contribution to tunneling magnetoresistance (TMR) exists in the magnetic tunneling process, which is determined by the tunneling characteristic length of the ferromagnetic electrodes. This characteristic length in MTJ's is different from the spin diffusion length in metallic based spin valves or magnetic multilayers due to the fundamental different transport behaviors in two structures. The experiment designed with a wedge-shaped CoFe layer inserted at the interface between the insulating barrier and reference electrode offers a unique and simple way to determine this characteristic length, which is about 0.8 nm for the CoFe electrode. For interfacial contributions to dominate TMR, the magnetic electrodes should have a very short tunneling characteristic length of atomic scale.
引用
收藏
页码:1 / 4
页数:4
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