Impact of on-chip interconnect frequency-dependent R(f)L(f)on digital and RF design

被引:0
|
作者
Cao, Y [1 ]
Huang, XJ [1 ]
Sylvester, D [1 ]
King, TJ [1 ]
Hu, CM [1 ]
机构
[1] Univ Calif Berkeley, EECS Dept, Berkeley, CA 94720 USA
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暂无
中图分类号
TP31 [计算机软件];
学科分类号
081202 ; 0835 ;
摘要
On-chip interconnect exhibits clear frequency-dependence in both resistance and inductance. A compact ladder circuit model is developed to capture this behavior, and we examine its impact on digital and RF circuit design. It is demonstrated that the use of DC values for R and L is sufficient for delay analysis, but RL frequency dependence is critical for the analysis of signal integrity, shield line insertion, power supply stability, and RF inductor performance.
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页码:438 / 442
页数:5
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