A 1.6 ppm/°C bandgap voltage reference for an extended operating temperature range

被引：2
|
作者：
Zawawi, Ruhaifi Abdullah [1 ]
Zulkifli, Tun Zainal Azni [2 ]
机构：
[1] Univ Sains Malaysia, Collaborat Microelect Design Excellence Ctr CEDEC, Seberang Prai Selatan 14300, Pulau Pinang, Malaysia
[2] Univ Sains Malaysia, Sch Elect & Elect Engn, RMIC Grp, Seberang Prai Selatan 14300, Pulau Pinang, Malaysia
来源：
IEICE ELECTRONICS EXPRESS | 2014年 / 11卷 / 12期
关键词：
CMOS bandgap reference; current-control circuit;
D O I：
10.1587/elex.11.20140383
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A new CMOS bandgap voltage reference (BGR) is proposed and simulated using Silterra 0.13 mu m CMOS technology. The proposed BGR utilizes 3 curvature-corrected current generators that compensate for the output voltage variation in an extended temperature range. The proposed circuit generates an output voltage of 1.181 V with a variation of 380 mu V from -50 degrees C to 150 degrees C.
引用
收藏
页数：5
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