Electronic structure of the Mn/Cd0.96Zn0.04Te(111) interface studied by synchrotron radiation

被引：1
|
作者：
Xu, PS [1 ]
Yang, FY [1 ]
Xu, SH [1 ]
Lu, ED [1 ]
Yu, XJ [1 ]
Fang, RC [1 ]
机构：
[1] UNIV SCI & TECHNOL CHINA,DEPT PHYS,HEFEI 230026,PEOPLES R CHINA
来源：
JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA | 1996年 / 80卷
关键词：
D O I：
10.1016/0368-2048(96)02960-X
中图分类号：
O433 [光谱学];
学科分类号：
0703 ; 070302 ;
摘要：
The formation and electronic structure of Mn/Cd0.96Zn0.04Te(111) have been investigated by photoemission with synchrotron radiation. It is determined that Mn grows on Mn/Cd0.96Zn0.04Te(111) in a two-dimensional mode at early stage. The possibility that the magnetic ordering state exists in the ultra-thin Mn film is proposed. With increasing Mn coverage, Mn atoms interdiffuse to the substrate and the exchange reaction between Mn and Cd is observed. The features of the spectra show that the Cd1-xMnxTe phase is formed at the interface. At high coverage of Mn, bulk alpha-Mn becomes dominant
引用
收藏
页码：217 / 220
页数：4
相关论文
共 50 条
  • [1] ELECTRONIC-STRUCTURE IN CD0.96ZN0.04TE COMPOUND - A SYNCHROTRON-RADIATION PHOTOEMISSION-STUDY
    YANG, FY
    FANG, RC
    XU, PS
    XU, SH
    CHINESE PHYSICS LETTERS, 1994, 11 (10): : 642 - 644
  • [2] ZN INFLUENCE ON THE PLASTICITY OF CD0.96ZN0.04TE
    IMHOFF, D
    ZOZIME, A
    TRIBOULET, R
    JOURNAL DE PHYSIQUE III, 1991, 1 (11): : 1841 - 1853
  • [3] Atomic and electronic structures of Cd0.96Zn0.04Te(110) surface
    Zha, GQ
    Jie, WQ
    Zhang, WH
    Li, Q
    Xu, FQ
    CHINESE PHYSICS LETTERS, 2005, 22 (09) : 2357 - 2359
  • [4] Cathodoluminescence investigations on CdTe and Cd0.96Zn0.04Te crystals
    Radhakrishnan, JK
    Salviati, G
    JOURNAL OF LUMINESCENCE, 2005, 113 (3-4) : 235 - 242
  • [5] Two-step growth of Cd0.96Zn0.04Te/Si(111) epilayers by HWE
    Lalev, GM
    Wang, JF
    Lim, JW
    Abe, S
    Masumoto, K
    Isshiki, M
    MATERIALS LETTERS, 2006, 60 (9-10) : 1198 - 1203
  • [6] Wafer bonding of (211) Cd0.96Zn0.04Te on (001) silicon
    C. Miclaus
    G. Malouf
    S. M. Johnson
    D. R. Rhiger
    M. S. Goorsky
    Journal of Electronic Materials, 2004, 33 : 552 - 555
  • [7] Optical and opto-electronic properties of polycrystalline Cd0.96Zn0.04Te thin films
    Sridharan, M
    Narayandass, SK
    Mangalaraj, D
    Lee, HC
    CRYSTAL RESEARCH AND TECHNOLOGY, 2003, 38 (06) : 479 - 487
  • [8] Exfoliation and blistering of Cd0.96Zn0.04Te substrates by ion implantation
    C. Miclaus
    G. Malouf
    S. M. Johnson
    M. S. Goorsky
    Journal of Electronic Materials, 2005, 34 : 859 - 863
  • [9] Properties of the titanium related level in Cd0.96Zn0.04Te crystals
    Zerrai, A
    Bremond, G
    JOURNAL OF APPLIED PHYSICS, 1998, 84 (10) : 5554 - 5559
  • [10] Exfoliation and blistering of Cd0.96Zn0.04Te substrates by ion implantation
    Miclaus, C
    Malouf, G
    Johnson, SM
    Goorsky, MS
    JOURNAL OF ELECTRONIC MATERIALS, 2005, 34 (06) : 859 - 863
12345