Effect of Ge passivation on interfacial properties of crystalline Gd2O3 thin films grown on Si substrates

被引：11

作者：

Laha, Apurba ^{[1
]}

Fissel, A. ^{[2
]}

Osten, H. J. ^{[1
]}

机构：

[1] Leibniz Univ Hannover, Inst Elect Mat & Devices, D-30167 Hannover, Germany

[2] Leibniz Univ Hannover, Informat Technol Lab, D-30167 Hannover, Germany

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 07期

关键词：

chemisorbed layers; electron traps; elemental semiconductors; gadolinium compounds; germanium; hole traps; insulating thin films; interface states; MIS capacitors; monolayers; passivation; silicon; ELECTRONIC-STRUCTURE; SURFACE PASSIVATION; SI(111)7X7 SURFACE; PHASE-TRANSITIONS; SI(001); PHOTOEMISSION; RECONSTRUCTIONS; OVERLAYERS;

D O I：

10.1063/1.3318260

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The incorporation of few monolayers of Ge chemisorbed on Si surface has been found to have significant impact on the electrical properties of crystalline Gd2O3 grown epitaxially on Si substrates. Although the Ge coverage on Si surface does not show any influence on the epitaxial quality of Gd2O3 layers, however, it exhibits a strong impact on their electrical properties. We show that by incorporating few monolayers of Ge at the interface between Gd2O3 and Si, the capacitance-voltage characteristics, fixed charge and density of interface traps of Pt/Gd2O3/Si capacitor are much superior to those layers grown on clean Si surfaces.

引用

页数：3

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