Reactive ion etching of CVD-diamond for sensor devices with a minimum feature size of 100 nm

In this paper a novel technique for structure definition in CVD-diamond with a minimum feature size of less than 100 nm is presented. Since this technique utilises only standard process steps and equipment, it can be transfered to various technology lines. To overcome the limitation of an insufficient resolution of conventional lithography, the conformity of a PECVD-deposition was applied to define an adequate masking layer. Hence the attainable feature size in combination with the outstanding properties of diamond offers a great variety of novel applications in sensor technology.