Dynamic loadline analysis of AlGaN/GaN HEMTs

被引：2

作者：

Green, BM ^{[1
]}

Kaper, VS ^{[1
]}

Tilak, V ^{[1
]}

Shealy, JR ^{[1
]}

Eastman, LF ^{[1
]}

机构：

[1] Cornell Univ, Sch Elect & Comp Engn, Ithaca, NY 14853 USA

来源：

IEEE LESTER EASTMAN CONFERENCE ON HIGH PERFORMANCE DEVICES, PROCEEDINGS | 2002年

关键词：

D O I：

10.1109/LECHPD.2002.1146786

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Surface trapping has been identified as a mechanism for lower than expected output power for experimental AlGaN/GaN HEMT's devices. This paper presents dynamic loadline analysis as a means of understanding device behavior that limits large signal performance. From observations of measured data, a model for bias-dependent drain resistance caused by trap-induced space-charge in the un-gated region on the drain side of the gate is proposed. This bias-dependent drain resistance model is implemented in conjunction with a Curtice-cubic analytical transistor model to simulate the observed behavior.

引用

页码：443 / 452

页数：10

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