Deposition processes for high silicon solar cells efficiency microcrystalline

被引：0

作者：

Finger, F. ^{[1
]}

Carius, R.

Geng, X.

Klein, S.

Mai, Y.

Sendova-Vassileva, M.

机构：

[1] Forschungszentrum, Inst Photovoltaik, D-52425 Julich, Germany

[2] Nankai Univ, Inst Photoelect, Tianjin 300071, Peoples R China

[3] Bulgarian Acad Sci, Cent Lab Solar Energy & New Energy Sources, BU-1784 Sofia, Bulgaria

来源：

JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS | 2007年 / 9卷 / 01期

关键词：

microcrystal line silicon; thin film solar cells; PECVD; HWCVD;

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Examples of recent achievements in the preparation of microcrystalline silicon for solar cell application are shown. The requirements on the deposition process given by the needs to prepare material with an optimum phase mixture are demonstrated. A focus is on the VHF-PECVD technique in the high-power, high-pressure regime. The advantage of the HWCVD process for improved interface performance is shown. Introduction of a buffer layer allows one to apply a high deposition rate processes and to achieve record solar cell efficiencies of 10.3% for a single junction pc-Si:H pin.

引用

页码：92 / 98

页数：7

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