Impact of LER on BEOL dielectric reliability: a quantitative model and experimental validation

被引：18

作者：

Tokei, Zs. ^{[1
]}

Roussel, Ph. ^{[1
]}

Stucchi, M. ^{[1
]}

Versluijs, J. ^{[1
]}

Ciofi, I. ^{[1
]}

Carbonell, L. ^{[1
]}

Beyer, G. P. ^{[1
]}

Cockburn, A. ^{[2
]}

Agustin, M. ^{[3
]}

Shah, K. ^{[3
]}

机构：

[1] IMEC, Kapeldreef 75, B-3001 Louvain, Belgium

[2] Appl Mat Belgium, B-3000 Louvain, Belgium

[3] Appl Mat Inc, Santa Clara, CA USA

来源：

PROCEEDINGS OF THE 2009 IEEE INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE | 2009年

关键词：

D O I：

10.1109/IITC.2009.5090395

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

For the first time we provide a model for describing the LER induced BEOL TDDB lifetime reduction. The model was validated on 50nm 1/2 pitch copper damascene lines embedded into a k=2.5 low-k material.

引用

页码：228 / +

页数：2

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