Effect of growth conditions on the Al composition and optical properties of AlxGa1-xN layers grown by atmospheric-pressure metal organic vapor phase epitaxy

被引:2
|
作者
Soltani, S. [1 ]
Bouzidi, M. [1 ]
Chine, Z. [1 ]
Toure, A. [2 ]
Halidou, I. [3 ]
El Jani, B. [1 ]
Shakfa, M. K. [4 ,5 ,6 ]
机构
[1] Univ Monastir, Fac Sci, URHEA, Monastir 5000, Tunisia
[2] Ecole Super Polytech, Inst Super Metiers Batiment Travaux Publ & Urbani, BP 4030, Nouakchott, Mauritania
[3] Abdou Moumouni Univ, Fac Sci & Technol, Dept Phys, BP10662, Niamey, Niger
[4] Philipps Univ Marburg, Dept Phys, Renthof 5, D-35032 Marburg, Germany
[5] Philipps Univ Marburg, Mat Sci Ctr, Renthof 5, D-35032 Marburg, Germany
[6] King Abdullah Univ Sci & Technol, Comp Elect & Math Sci & Engn CEMSE Div, Photon Lab, Thuwal 239556900, Saudi Arabia
关键词
Aluminum gallium nitride; Metal organic chemical vapor deposition; Photoreflectance spectroscopy; Time-resolved photoluminescence; ALGAN ALLOYS; PHOTOREFLECTANCE INVESTIGATIONS; SIN TREATMENT; GAN; HETEROSTRUCTURES; MOVPE; ELECTRON; FILMS; DEPOSITION; QUALITY;
D O I
10.1016/j.tsf.2017.02.039
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The effect of growth conditions on the Al composition and optical properties of AlxGa1-xN layers grown by atmospheric-pressure metal organic vapor phase epitaxy is investigated. The Al content of the samples is varied between 3.0% and 9.3% by changing the gas flow rate of either trimethylaluminum (TMA) or trimethylgallium (TMG) while other growth parameters are kept constant. The optical properties of the AlxGa1-xN layers are studied by photoreflectance and time-resolved photoluminescence (TR-PL) spectroscopies. A degeneration in the material quality of the samples is revealed when the Al content is increased by increasing the TMA flow rate. When the TMG flow rate is decreased with a fixed TMA flow rate, the Al content of the AlxGa1-xN layers is increased and, furthermore, an improvement in the optical properties corresponding with an increase in the PL decay time is observed. (C) 2017 Elsevier B.V. All rights reserved.
引用
收藏
页码:2 / 6
页数:5
相关论文
共 50 条
  • [1] Deep Electronic Levels of AlxGa1-xN with a Wide Range of Al Composition Grown by Metal-Organic Vapor Phase Epitaxy
    Ooyama, Kimihito
    Sugawara, Katsuya
    Okuzaki, Shinya
    Taketomi, Hiroyuki
    Miyake, Hideto
    Hiramatsu, Kazumasa
    Hashizume, Tamotsu
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2010, 49 (10) : 1010011 - 1010015
  • [2] Compositional fluctuations in AlxGa1-xN layers grown on 6H-SiC (0001) by metal organic vapor phase epitaxy
    Kröger, R
    Einfeldt, S
    Reitmeier, ZJ
    Chierchia, R
    Ryder, P
    Hommel, D
    Davis, RF
    GAN AND RELATED ALLOYS-2002, 2003, 743 : 255 - 260
  • [3] Metalorganic vapor phase epitaxy growth and photoluminescence properties of cubic AlxGa1-xN
    Wu, J
    Yaguchi, H
    Onabe, K
    Shiraki, Y
    APPLIED PHYSICS LETTERS, 1998, 73 (02) : 193 - 195
  • [4] Diffusion of Mg dopant in metal-organic vapor-phase epitaxy grown GaN and AlxGa1-xN
    Koehler, K.
    Gutt, R.
    Wiegert, J.
    Kirste, L.
    JOURNAL OF APPLIED PHYSICS, 2013, 113 (07)
  • [5] Characterization of low Al content AlxGa1-xN epitaxial films grown by atmospheric-pressure MOVPE
    Toure, A.
    Halidou, I.
    Benzarti, Z.
    Fouzri, A.
    Bchetnia, A.
    El Jani, B.
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2012, 209 (05): : 977 - 983
  • [6] Metal-organic hydride vapor phase epitaxy of AlxGa1-xN films over sapphire
    Fareed, Qhalid
    Adivarahan, Vinod
    Gaevski, Mikhail
    Katona, Thomas
    Mei, Jin
    Ponce, Fernando A.
    Khan, Asif
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2007, 46 (29-32): : L752 - L754
  • [7] In situ Eu doping into AlxGa1-xN grown by organometallic vapor phase epitaxy to improve luminescence properties
    Koizumi, Atsushi
    Kawabata, Kosuke
    Lee, Dong-gun
    Nishikawa, Atsushi
    Terai, Yoshikazu
    Ofuchi, Hironori
    Honma, Tetsuo
    Fujiwara, Yasufumi
    OPTICAL MATERIALS, 2015, 41 : 75 - 79
  • [8] Cathodoluminescence properties of undoped and Zn-doped AlxGa1-xN grown by metalorganic vapor phase epitaxy
    Itoh, Kenji
    Amano, Hiroshi
    Hiramatsu, Kazumasa
    Akasaki, Isamu
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1991, 30 (08): : 1604 - 1608
  • [9] Structural and optical analyses of AlxGa1-xN thin films grown by metal organic chemical vapor deposition
    Kucukgok, Bahadir
    Lu, Na
    Ferguson, Ian T.
    Wang, Shu Chang
    Zhang, Xiong
    Feng, Zhe Chuan
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2015, 54 (02)
  • [10] Scanning electron microscope studies of cubic AlxGa1-xN films grown on GaAs(100) by metal organic vapor phase epitaxy (MOVPE)
    Xu, DP
    Yang, H
    Zhao, DG
    Li, JB
    Zheng, LX
    Wang, YT
    Li, SF
    Duan, LH
    Wu, RH
    JOURNAL OF CRYSTAL GROWTH, 1999, 203 (1-2) : 40 - 44