An analytical propagation delay model with power supply noise effects

被引:0
|
作者
Pude, Mork [1 ]
Washburn, Clyde
Mukund, P. R.
Abe, Kouichi
Nishi, Yoshinori
机构
[1] Rochester Inst Technol, Dept Elect Engn, Rochester, NY 14623 USA
[2] Kawasaki Microelect America Inc, Mixed Signal IP Dev, San Jose, CA USA
关键词
D O I
暂无
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
This paper presents an analytical model for CMOS logic propagation delay which includes the effect of power supply noise. Using the nth power law model of MOSFETs, two scenarios are addressed: self-induced power supply noise and globally-induced power supply noise. The analytical model is verified in simulation for both cases. The self-induced noise model matches simulation to within 0.36%. The globally-induced noise model matches simulation to within 5% for typical input rise time values and never more than 15% under extreme conditions.
引用
收藏
页码:629 / 632
页数:4
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