Room temperature I-V characteristics of Si/Si1-xGex/Si interband tunneling diodes

被引：4

作者：

Duschl, R ^{[1
]}

Schmidt, OG ^{[1
]}

Eberl, K ^{[1
]}

机构：

[1] Max Planck Inst Festkorperforsch, D-70569 Stuttgart, Germany

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2000年 / 7卷 / 3-4期

关键词：

interband tunneling; Esaki tunneling diode; Si/Si1-xGex;

D O I：

10.1016/S1386-9477(00)00072-2

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Room temperature (RT) I-V characteristics of epitaxially grown Si/Si0.5Ge0.5/Si p(+)-i-n(+) Esaki tunneling diodes are presented. A detailed investigation of the tunneling mechanism shows the importance of the incorporated Ge for an enhancement of the tunneling probability, due to a reduction of the tunneling barrier. The variation of the deposited P at the i-n(+) interface, to provide a delta-doping layer, results in a monotonic increase of the peak current with increasing doping concentration. The optimization of the post-growth annealing process results in a peak-to-valley current ratio (PVCR) of 4.2. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：836 / 839

页数：4

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