High growth-rate process in a SiC horizontal reactor with HCl addition: Structural and electrical characterization

被引：0

作者：

La Via, Francesco ^{[1
]}

Galvagno, Giuseppa ^{[1
]}

Firrincieli, Andrea ^{[1
]}

Di Franco, Salvatore ^{[1
]}

Severino, Andrea ^{[1
]}

Leone, Stefano ^{[2
]}

Mauceri, Marco ^{[2
]}

Pistone, Giuseppe ^{[2
]}

Abbondanza, Giuseppe ^{[2
]}

Portuese, Ferdinando ^{[2
]}

Calcagno, Lucia ^{[3
]}

Foti, Gaetano ^{[3
]}

机构：

[1] CNR IMM, Str Primosole 50, I-95121 Catania, Italy

[2] BIC Sicilia Pantano dArci, Epitaxial Technol Ctr, I-95030 Catania, Italy

[3] Catania Univ, Phys Dept, I-95123 Catania, Italy

来源：

SILICON CARBIDE 2006 - MATERIALS, PROCESSING AND DEVICES | 2006年 / 911卷

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The growth rate of 4H-SiC epitaxial layer has been increased by a factor 19 (up to 112 mu m/h) with respect to the standard process with the introduction of HCl in the deposition chamber. The epitaxial layers grown with the addition of HCl have been characterized by electrical, optical and structural characterization methods. The effects of different deposition parameters on the epitaxial growth process have been described in detail.. This process can be very promising for high power devices with a breakdown voltage of 10 kV.

引用

页码：95 / +

页数：2

共 20 条

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