Monte Carlo simulation of particle-induced X-ray emission channeling spectra of GaAs crystals

被引：2
|
作者：
Al-Turany, M [1 ]
Meyer, JD [1 ]
Bethge, K [1 ]
机构：
[1] Univ Frankfurt, Inst Kernphys, D-60486 Frankfurt, Germany
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2000年 / 168卷 / 03期
关键词：
PIXE; channeling; Monte Carlo simulation;
D O I：
10.1016/S0168-583X(99)01208-2
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
The characteristics of the PIXE-method in channeling measurements of GaAs crystals was studied. An XR-100CR Si-PIN detector was used to collect the K and L X-rays originating from He+ bombardment of GaAs crystals. The difference in the relative intensity between Ga and As L-lines in random and channeling directions was analyzed by Monte Carlo simulation, using the material analysis by ion channeling (MABIC) code. The modified version of MABIC utilizes the inner shell ionization probabilities, the secondary fluorescence process and the self-absorption of the X-rays in the sample under channeling conditions for the reproduction of the different experimental spectra. Furthermore, the response function of the detector as function of the X-rays energy and the detection efficiency of this detector were incorporated into MABIC, in order to reproduce the experimental spectra directly. (C) 2000 Elsevier Science B.V. All lights reserved.
引用
收藏
页码：362 / 366
页数：5
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