Resistive switching characteristics and conducting nanobits of polycrystalline NiO thin films

被引：15
|
作者：
Ahn, Yoonho [1 ]
Jang, Joonkyung [2 ]
Son, Jong Yeog [1 ]
机构：
[1] Kyung Hee Univ, Dept Appl Phys, Yongin 446701, South Korea
[2] Pusan Natl Univ, Dept Nanoenergy Engn, Busan 609735, South Korea
来源：
JOURNAL OF ELECTROCERAMICS | 2017年 / 38卷 / 01期
基金：
新加坡国家研究基金会;
关键词：
NiO; Thin film; Polycrystalline; Resistive random access memory; Atomic force microscope; NONVOLATILE MEMORY; TRANSITION; RESET;
D O I：
10.1007/s10832-017-0067-0
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Thin films of NiO were deposited on Pt/Ta/glass sub-strates using a radio frequency (RF) sputtering method. The NiO thin films showed polycrystalline nature, indicating preferentially (111)-oriented structure. The resistive random access memory (RRAM) capacitor of a Pt/NiO/Pt structure exhibited unipolar switching characteristics and bistable resistivities for 200 repeated switching cycles. Furthermore, RRAM nanobits array was formed on the NiO thin films by applying a bias. The RRAM nanobits had a diameter of approximately 8 nm and were observed via a conducting atomic force microscope (CAFM). The density of the RRAM nanobits array was estimated to be approximately 0.64 Tbit/cm(2).
引用
收藏
页码：100 / 103
页数：4
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