Comparison of the radio frequency hollow cathode to the microwave antenna discharge for plasma processing

被引:11
|
作者
Bárdos, L
Baránková, H
Welzel, T
Dani, I
Peter, S
Richter, F
机构
[1] Univ Uppsala, Angstrom Lab, S-75121 Uppsala, Sweden
[2] Tech Univ Chemnitz, Inst Phys, D-09107 Chemnitz, Germany
关键词
D O I
10.1063/1.1385355
中图分类号
O59 [应用物理学];
学科分类号
摘要
Two nonconventional systems, the radio frequency hollow cathode discharge (RHCD) and the microwave antenna discharge (MWAD), with almost identical geometry of electrodes generating a nitrogen plasma at power level up to 60 W were compared. Both systems were used for deposition of nitride films at similar experimental parameters. The Al-N films were deposited in the RHCD system by reactive physical vapor deposition (PVD) using an Al radio frequency hollow cathode and the CNx films were deposited in the MWAD system by plasma activated chemical vapor deposition (PACVD) from N-2+1% (alternatively 0.5% or 0.4%) C2H2 gas mixtures. The vibrational temperatures of nitrogen molecules in both systems were compared as functions of experimental parameters and discussed with respect to the film growth rates in the particular systems. It was found that irrespective of frequency difference of two orders of magnitude the vibrational temperatures of nitrogen molecules were similar, between 3000 and 4600 K, in both systems at similar experimental conditions. However, shapes of dependences of the vibrational temperature on particular parameters were different, due to different plasma generation principles. The nitride film growth rates were found to correlate to the vibrational temperatures of nitrogen molecules, but their dependences on experimental parameters were affected by specific features of the plasma generation in individual systems as well as by different mechanisms of the PVD and the PACVD of films. (C) 2001 American Institute of Physics.
引用
收藏
页码:1703 / 1709
页数:7
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