Influence of Disorder on Electron-Hole Pairing in Graphene Bilayer

被引：16
|
作者：
Efimkin, D. K. [1 ]
Kulbachinskii, V. A. [2 ]
Lozovik, Yu. E. [1 ,3 ]
机构：
[1] Russian Acad Sci, Inst Spect, Troitsk 142190, Moscow Region, Russia
[2] Moscow MV Lomonosov State Univ, Fac Phys, Moscow 119991, Russia
[3] Moscow Inst Phys & Technol, Dolgoprudnyi 141700, Moscow Region, Russia
来源：
JETP LETTERS | 2011年 / 93卷 / 04期
基金：
俄罗斯基础研究基金会;
关键词：
Coherent State; JETP Letter; Graphene Layer; Vertex Function; Graphene Bilayer;
D O I：
10.1134/S0021364011040084
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We consider disorder effect on electron-hole pairing in the system of two graphene monolayers separated by dielectric barrier. The influence of charged impurities on temperature of phase transition is studied. In spite of large values of mobility of charge carriers in graphene disorder can considerably reduce temperature of electron-hole condensation in weak-coupling regime. The quantum hydrodynamics of the system is considered and phase stiffness of electron-hole condensate and temperature of Berezinskii-Kosterlitz-Thouless transition to the superfluid state are calculated.
引用
收藏
页码：219 / 222
页数：4
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