Influence of InGaN layer growth temperature on luminescence properties of InGaN/GaN multiple quantum wells

被引：4

作者：

Wang, Xiaowei ^{[1
,2
]}

Yang, Jing ^{[1
]}

Zhao, Degang ^{[1
]}

Jiang, Desheng ^{[1
,3
]}

Liu, Zongshun ^{[1
]}

Liu, Wei ^{[1
]}

Liang, Feng ^{[1
]}

Liu, Shuangtao ^{[1
]}

Xing, Yao ^{[1
]}

Wang, Wenjie ^{[4
]}

Li, Mo ^{[4
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China

[2] Univ Chinese Acad Sci, Coll Mat Sci & Optoelect Technol, Beijing 100049, Peoples R China

[3] Univ Chinese Acad Sci, Sch Elect Elect & Commun Engn, Beijing 100049, Peoples R China

[4] China Acad Engn Phys, Microsyst & Terahertz Res Ctr, Chengdu 610200, Sichuan, Peoples R China

来源：

MATERIALS RESEARCH EXPRESS | 2018年 / 5卷 / 02期

基金：

中国国家自然科学基金;

关键词：

InGaN/GaNMQWs; localization states; growth temperature; LIGHT-EMITTING-DIODES; DEPENDENCE; GAP;

D O I：

10.1088/2053-1591/aaaef2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Optical investigation was performed on InGaN/GaN multiple quantum well (MQW) structures grown by metalorganic chemical vapor deposition (MOCVD) with different temperatures. It is found that the emission intensity decreases abruptly when the growth temperature of InGaNQW decreases from 710 to 670 degrees C. The XRD measurements show that a poorer quality interface between the QW layers could decrease the emission quite a bit when the growth temperature is lower. In addition, due to the weakening surface mobility of adatoms, the localization states accompanied with defects are distributed more inhomogeneous at lower growth temperature, which is also responsible for the low emission intensity.

引用

页数：6

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