Approximation of non-zero transistor ON resistance in class-E amplifiers

被引：0
|
作者：
Ho, CK [1 ]
Wong, H [1 ]
Ma, SW [1 ]
机构：
[1] City Univ Hong Kong, Dept Elect Engn, Kowloon, Hong Kong, Peoples R China
来源：
ICCDCS 2004: Fifth International Caracas Conference on Devices, Circuits and Systems | 2004年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This work aims to develop accurate design formulae for class E power amplifier designs by considering the non-zero transistor "ON" resistance. With this consideration, the output characteristics of the amplifier can be approximated more accurately. Based on the derived analytical formulas, several class E amplifiers with operation frequency ranging from 100 kHz to 900 MHz were designed. The calculated characteristics of the amplifiers were validated with PSpice and Microwave Office simulations and experimental results. Good agreements were obtained.
引用
收藏
页码：90 / 93
页数：4
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