High-deposition rate a-Si:H n-i-p solar cells grown by HWCVD

被引：41

作者：

Nelson, BP ^{[1
]}

Iwaniczko, E ^{[1
]}

Mahan, AH ^{[1
]}

Wang, Q ^{[1
]}

Xu, YQ ^{[1
]}

Crandall, RS ^{[1
]}

Branz, HM ^{[1
]}

机构：

[1] Natl Renewable Energy Lab, Golden, CO 80401 USA

来源：

THIN SOLID FILMS | 2001年 / 395卷 / 1-2期

关键词：

amorphous materials; silicon; solar cells; deposition process;

D O I：

10.1016/S0040-6090(01)01274-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We grow hydrogenated amorphous silicon (a-Si:H) solar cells in a device structure denoted as SS/n-i-p/ITO. We grow all the a-Si:H layers by hot-wire chemical vapor deposition (HWCVD) and the indium-tin-oxide (ITO) by reactive evaporation. We axe able to grow HWCVD i-layer materials that maintain an AM1.5 photoconductivity-to-dark-conductivity ratio of 10(5) at deposition rates up to 130 Angstrom /s. We have put these high-deposition rate i-layer materials into SS/n-i-p/ITO devices and light-soaked them for greater than or equal to 1000 h under AM1.5 conditions. We obtain stabilized solar cell efficiencies of 5.5% at 18 Angstrom /s, 4.8% at 35 Angstrom /s, 4.1% at 83 Angstrom /s and 3.8% at 127 Angstrom /s. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：292 / 297

页数：6

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